P. J. Matsuo - Concepedia

Author

P. J. Matsuo

University at Albany, State University of New York

Also Known As

P J Matsuo, P. J. Matsuo

Publications

797

Citations

H-Index

Concepts

All Affiliations

University at Albany, State University of New York Albany State University Air Products (United States)IBM (United States)

About

P. J. Matsuo is an author at University at Albany, State University of New York specializing in engineering, surface science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	789
2	Applied Physics	12	12	735
3	Chemical Engineering	8	8	561
4	Electrical Engineering	5	5	194
5	Chemistry	3	3	180

P. J. Matsuo

Publications

789

Citations

H-Index

Page 1

	Year	Citations
Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures B. E. E. Kastenmeier, P. J. Matsuo, JJ Beulens, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSilicon On InsulatorPlasma ProcessingChemical EngineeringMaterials Science	1996	144
Highly selective etching of silicon nitride over silicon and silicon dioxide B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSelective EtchingIntegrated CircuitsSilicon On InsulatorPlasma Processing	1999	104
Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringIntegrated CircuitsVacuum DeviceSilicon On InsulatorPlasma Processing	1998	93
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2 T. E. F. M. Standaert, P. J. Matsuo, Susan D. Allen, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Fluorocarbon Film IncreasesEngineeringIntegrated CircuitsChemistryPlasma Processing	1999	75
Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon P. J. Matsuo, B. E. E. Kastenmeier, JJ Beulens, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringVacuum DeviceChemistrySilicon On InsulatorPlasma Processing	1997	68
Characterization of Al, Cu, and TiN surface cleaning following a low-<i>K</i> dielectric etch P. J. Matsuo, T. E. F. M. Standaert, Susan D. Allen, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Fluorocarbon ExposureEngineeringVacuum DeviceHigh DensityChemical Engineering	1999	54
High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether) T. E. F. M. Standaert, P. J. Matsuo, X. Li, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringPattern TransferInterlayer DielectricsVacuum DeviceHigh-density Plasma Patterning	2001	48
Surface science issues in plasma etching G. S. Oehrlein, M. F. Doemling, B. E. E. Kastenmeier, IBM Journal of Research and Development Polysilicon LayerElectrical EngineeringEngineeringMicrofabricationSurface Science	1999	45
Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceChemical EngineeringEngineeringMicrofabricationNanotechnology	2001	37
Silicon etching in NF3/O2 remote microwave plasmas P. J. Matsuo, B. E. E. Kastenmeier, G. S. Oehrlein, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Electrical EngineeringChemical EngineeringReaction Layer ThicknessEngineeringMicrofabrication	1999	35

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