B. E. E. Kastenmeier

Author

University at Albany, State University of New York

Also Known As

B E E Kastenmeier, B. E. E. Kastenmeier, B. Kastenmeier, B.E. Kastenmeier, Bernd Kastenmeier

Publications

661

Citations

H-Index

Concepts

All Affiliations

University at Albany, State University of New York Albany State University IBM (United States)Air Products (United States)University of Maryland, College Park

About

B. E. E. Kastenmeier is an author at University at Albany, State University of New York specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	654
2	Applied Physics	10	10	612
3	Chemical Engineering	8	8	539
4	Chemistry	4	4	147
5	Electrical Engineering	4	4	140

B. E. E. Kastenmeier

Publications

654

Citations

H-Index

Page 1

	Year	Citations
Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures B. E. E. Kastenmeier, P. J. Matsuo, JJ Beulens, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSilicon On InsulatorPlasma ProcessingChemical EngineeringMaterials Science	1996	144
Highly selective etching of silicon nitride over silicon and silicon dioxide B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSelective EtchingIntegrated CircuitsSilicon On InsulatorPlasma Processing	1999	104
Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringIntegrated CircuitsVacuum DeviceSilicon On InsulatorPlasma Processing	1998	93
Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon P. J. Matsuo, B. E. E. Kastenmeier, JJ Beulens, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringVacuum DeviceChemistrySilicon On InsulatorPlasma Processing	1997	68
Surface science issues in plasma etching G. S. Oehrlein, M. F. Doemling, B. E. E. Kastenmeier, IBM Journal of Research and Development Polysilicon LayerElectrical EngineeringEngineeringMicrofabricationSurface Science	1999	45
Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceChemical EngineeringEngineeringMicrofabricationNanotechnology	2001	37
Silicon etching in NF3/O2 remote microwave plasmas P. J. Matsuo, B. E. E. Kastenmeier, G. S. Oehrlein, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Electrical EngineeringChemical EngineeringReaction Layer ThicknessEngineeringMicrofabrication	1999	35
Gas utilization in remote plasma cleaning and stripping applications B. E. E. Kastenmeier, G. S. Oehrlein, J.G. Langan, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Chemical EngineeringEngineeringEnergy EfficiencyPfc GasesMass Spectrometry	2000	32
Study of plasma - surface interactions: chemical dry etching and high-density plasma etching G. S. Oehrlein, P. J. Matsuo, M. F. Doemling, Plasma Sources Science and Technology Materials ScienceElectrical EngineeringSurface InteractionsEngineeringHigh-density Plasma	1996	30
A high performance 0.13 μm copper BEOL technology with low-k dielectric R. Goldblatt, B. Agarwala, M.B. Anand, Materials ScienceMaterials EngineeringElectrical EngineeringCopper WiringMetal Pitches	2002	30

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