Journal of Applied Physics · 1983 · 40 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceDefects In Electronic MaterialsSemiconductor DefectsSemiconductor SurfacesSurface Chemistry Of SolidsSurface PhysicsSurface SpectroscopyDefect-related LuminescencePhotoluminescencePhotoluminescence SpectroscopyPolishingSemiconductor Surface PreparationSurface Defect FormationSurface DefectsSurface Polishing
Photoluminescence spectra were obtained at 77 K for three undoped CdTe single crystal specimens whose surfaces were prepared by mechanical, conventional chemimechanical, and modified hydroplane polishing techniques, respectively. The hydroplane polished sample was found to be a much brighter source of photoluminescence than either of the other two specimens. In addition, hydroplane polishing produced a photoluminescence spectrum in which nearly all of the emission occurred in a band centered at 1.58 eV rather than in the well-known defect band at 1.42 eV. We interpret these results as providing evidence that hydroplane polishing of CdTe produces a surface having a low density of defects.
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Photoluminescence in high-resistivity CdTe : In
C. E. Barnes, K. Zanio · Journal of Applied Physics · 1975 · 103 citations
Growth of CdTe films on sapphire by molecular beam epitaxy
T. H. Myers, Y. C. Lo, R. N. Bicknell et al. · Applied Physics Letters · 1983 · 84 citations
Natural Sciences, Materials Engineering, Materials Science +17