Physical Properties of Amorphous In–Ga–Zn–O Films Deposited at Different Sputtering Pressures

Abstract

The physical properties of amorphous In–Ga–Zn–O (a-IGZO) films deposited by DC sputtering under various sputtering pressures were investigated. The sputtering pressure was found to influence various physical properties. Lower sputtering pressures resulted in film densification and decreased both surface roughness and hydrogen concentration. In addition, transistor performance characteristics such as saturation mobility and sub-threshold swing improved as the sputtering pressure decreased. These results yield insight into the correlation between thin film transistor (TFT) performance and deposition conditions.