Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

D. E. Aspnes, A. A. Studna · Physical review. B, Condensed matter · 1983 · 4K citations

Natural Sciences, Materials Engineering, Materials Science +17

Optical properties of Al<i>x</i>Ga1−<i>x</i> As

D. E. Aspnes, S. M. Kelso, R. A. Logan et al. · Journal of Applied Physics · 1986 · 879 citations

Natural Sciences, Materials Engineering, Materials Science +17

Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-Al<i>x</i>Ga1−<i>x</i>As multiple heterostructures

Paul G. Snyder, M. Rost, George H. Bu-Abbud et al. · Journal of Applied Physics · 1986 · 124 citations

Natural Sciences, Materials Engineering, Materials Science +17

Peroxide etch chemistry on 〈100〉In0.53Ga0.47As

D. E. Aspnes, H. J. Stocker · Journal of Vacuum Science and Technology · 1982 · 29 citations

Natural Sciences, Chemistry, Materials Science +17