D. Lancefield - Concepedia

Author

D. Lancefield

University of Surrey

Also Known As

D Lancefield, D. Lancefield, David Lancefield

Publications

323

Citations

H-Index

Concepts

All Affiliations

University of Surrey Centre National de la Recherche Scientifique Worcestershire Royal Hospital Université de Montpellier

About

D. Lancefield is an author at University of Surrey specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	265
2	Applied Physics	12	13	265
3	Electrical Engineering	5	5	95
4	Natural Sciences	1	1	26
5	Materials Engineering	1	1	11

D. Lancefield

Publications

265

Citations

H-Index

Page 1

	Year	Citations
Reassessment of ionized impurity scattering and compensation in GaAs and InP including correlation scattering D. Lancefield, A.R. Adams, Michael A. Fisher Journal of Applied Physics Correlation ScatteringEngineeringElectron DiffractionElectron PhysicSemiconductors	1987	40
Temperature-dependent hole transport in GaN D. Lancefield, Hosein Eshghi Journal of Physics Condensed Matter Wide-bandgap SemiconductorElectrical EngineeringTemperature-dependent Hole TransportEngineeringPhysics	2001	27
Airy function analysis of Franz–Keldysh oscillations in the photoreflectance spectra of In1−xGaxAsyP1−y layers David J. Hall, T. J. C. Hosea, D. Lancefield Journal of Applied Physics Categoryquantum ElectronicsEngineeringElectronic StructureQuantum EngineeringSemiconductor Nanostructures	1997	26
Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy M.A. di Forte-Poisson, F. Huet, Albert Romann, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGan Power Device	1998	25
Pressure dependence of light-hole transport in strained InGaAs/GaAs D. Lancefield, W. Batty, C.G. Crookes, Surface Science PhotonicsPressure DependenceEngineeringPhysicsApplied Physics	1990	24
Quantum-Well and Cavity-Mode Resonance Effects in a Vertical-Cavity Surface-Emitting Laser Structure, Observed by Photoreflectance Using Hydrostatic Pressure and Temperature Tuning P. Vicente, Philippe Thomas, D. Lancefield, physica status solidi (b) Optical PumpingPhotonicsConventional ReflectanceEngineeringPhysics	1999	20
The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence D. Lancefield, A.R. Adams, A.T. Meney, Journal of Physics and Chemistry of Solids PhotonicsPressure DependenceLight-hole MassEngineeringPhysics	1995	19
Growth and characterization of relaxed epilayers of InGaAs on GaAs D. J. Dunstan, R. H. Dixon, P. Kidd, Journal of Crystal Growth Electrical EngineeringEngineeringRelaxed EpilayersPhysicsApplied Physics	1993	18
The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)As Tim Foster, M. L. Leadbeater, D. K. Maude, Solid-State Electronics Wide-bandgap SemiconductorEngineeringTunneling MicroscopyPhysicsApplied Physics	1989	16
Detailed analysis of room-temperature photoreflectance of strained In<i>x</i>Ga1−<i>x</i>As/Al<i>y</i>Ga1−<i>y</i>As undoped single quantum wells T. J. C. Hosea, D. Lancefield, N. S. Garawal Journal of Applied Physics Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringBarrier CompositionSemiconductors	1996	14

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