Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy - Concepedia

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Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy

25

Citations

1

References

1998

Year

M.A. di Forte-Poisson, F. Huet, Albert Romann, M. Tordjman, D. Lancefield, E. Pereira, J. Di Persio, B. Pécz

Journal of Crystal Growth

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGan Power DeviceGas PurificationCategoryiii-v SemiconductorPhysical Properties

References

	Year	Citations

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