E. Pereira

Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping

S. Pereira, M. R. Correia, E. Pereira et al. · Applied Physics Letters · 2002 · 236 citations

Wide-bandgap Semiconductor, Engineering, Strain Gradients +17

Compositional dependence of the strain-free optical band gap in InxGa1−xN layers

S. Pereira, M. R. Correia, T. Monteiro et al. · Applied Physics Letters · 2001 · 109 citations

Strain Free Dependence, Optical Materials, Engineering +16

Structural and optical properties of InGaN/GaN layers close to the critical layer thickness

S. Pereira, M. R. Correia, E. Pereira et al. · Applied Physics Letters · 2002 · 101 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Interpretation of double x-ray diffraction peaks from InGaN layers

S. Pereira, M. R. Correia, E. Pereira et al. · Applied Physics Letters · 2001 · 58 citations

Materials Science, Materials Engineering, Aluminium Nitride +15

Roughness in GaN/InGaN films and multilayers determined with Rutherford backscattering

N.P. Barradas, E. Alves, S. Pereira et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 32 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +7