E. Pereira - Concepedia

Author

E. Pereira

Also Known As

E Pereira, E. Henrique Da Silva Pereira, E. Pereira, Everton Henrique Da Silva Pereira, Everton Henrique Da Silva Pereira, J Yu

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

University of Aveiro University of Strathclyde TARH (Portugal)Technical University of Munich Technological University of the Shannon: Midlands Midwest

About

E. Pereira is an author at University of Aveiro specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	718
2	Applied Physics	13	16	731
3	Natural Sciences	2	2	27
4	Chemical Engineering	1	1	13
5	Chemistry	1	1	16

E. Pereira

Publications

813

Citations

H-Index

Page 1

	Year	Citations
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping S. Pereira, M. R. Correia, E. Pereira, Applied Physics Letters Wide-bandgap SemiconductorEngineeringStrain GradientsReciprocal SpaceLayer Thickness	2002	236
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers S. Pereira, M. R. Correia, T. Monteiro, Applied Physics Letters Strain Free DependenceOptical MaterialsEngineeringInxga1−xn LayersCompositional Dependence	2001	109
Structural and optical properties of InGaN/GaN layers close to the critical layer thickness S. Pereira, M. R. Correia, E. Pereira, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringLuminescence SpectrumOptical Properties	2002	101
Interpretation of double x-ray diffraction peaks from InGaN layers S. Pereira, M. R. Correia, E. Pereira, Applied Physics Letters Materials ScienceMaterials EngineeringAluminium NitrideX-ray SpectroscopyPhase Segregation	2001	58
Roughness in GaN/InGaN films and multilayers determined with Rutherford backscattering N.P. Barradas, E. Alves, S. Pereira, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsSurface Science	2003	32
Temperature behaviour of the yellow emission in GaN R. Seitz, C. Gaspar, T. Monteiro, MRS Internet Journal of Nitride Semiconductor Research	1997	30
The 2.96 eV centre in diamond E. Pereira, L. Santos Physica B Condensed Matter StandardizationGreen VehicleEv Centre	1993	27
Cathodoluminescence study of GaN epitaxial layers Ana Cremades, J. Piqueras, C. Xavier, Materials Science and Engineering B Categoryiii-v SemiconductorApplied PhysicsGan Epitaxial LayersGan Power Device	1996	26
Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy M.A. di Forte-Poisson, F. Huet, Albert Romann, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGan Power Device	1998	25
Direct evidence for strain inhomogeneity in InxGa1−xN epilayers by Raman spectroscopy M. R. Correia, S. Pereira, E. Pereira, Applied Physics Letters Materials EngineeringMaterials ScienceStrain InhomogeneityInxga1−xn EpilayersEngineering	2004	21

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