A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride

Abstract

We have investigated the influence of the growth conditions on the intensity of blue emission at room temperature from As-doped GaN samples grown by molecular beam epitaxy. A series of As-doped GaN samples was grown at 800 °C with constant fluxes of As and gallium, but with different amounts of active nitrogen. Varying the N flux allowed us to investigate films grown from strongly Ga-rich conditions to more N-rich conditions. The blue emission increases monotonically with the nitrogen flux and is most intense in the layers grown under the most nitrogen-rich conditions. This fact suggests that As atoms incorporated into the Ga sub-lattice are responsible for the strong blue emission in As-doped GaN.