A.J. Winser

Strong blue emission from As doped GaN grown by molecular beam epitaxy

A.J. Winser, C.S. Davis, T.S. Cheng et al. · Applied Physics Letters · 2000 · 38 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Arsenic-doped GaN grown by molecular beam epitaxy

C. T. Foxon, T.S. Cheng, C.S. Davis et al. · Journal of Crystal Growth · 2000 · 28 citations

Electrical Engineering, Engineering, Applied Physics +3

The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy

C. T. Foxon, I. Harrison, A.J. Winser et al. · Journal of Physics Condensed Matter · 2002 · 27 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride

A.J. Winser, I. Harrison, C.S. Davis et al. · Semiconductor Science and Technology · 2001 · 22 citations

Wide-bandgap Semiconductor, Room Temperature, Engineering +13

The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

A.J. Winser, A. Bell, I. Harrison et al. · Journal of Crystal Growth · 2002 · 16 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +9