2013 · 39 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignIntegrated Circuit DesignLeakage Power ReductionMetal-oxide-semiconductor Field-effect TransistorsBreakdown VoltageLeakage Current ReductionProtection
We present an innovative set of UTBB (Ultra-Thin Body and BOX) ESD protection devices, which achieves remarkable performance in terms of leakage current and triggering control. Ultra-low leakage current below 0.1 pA/μm and adjustable triggering (1.1V <; V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t1</sub> <; 2.6V) capability are demonstrated. These devices rely on gate-controlled injection barriers and match the 28nm UTBB-FDSOI ESD design window by triggering before the nominal breakdown voltage of digital core MOS transistors.
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28nm FDSOI technology platform for high-speed low-voltage digital applications
N. Planes, O. Weber, V. Barral et al. · 2012 · 424 citations
Engineering, Computer Engineering, Electrical Engineering +16
Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond
O. Faynot, F. Andrieu, O. Weber et al. · 2010 · 104 citations