Loan Pham-Nguyen - Concepedia

Author

Loan Pham-Nguyen

Institut de Microélectronique, Electromagnétisme et Photonique ORCID

Also Known As

L. Nguyen, L. PHAM-NGUYEN, L. Pham Nguyen, L. Pham-NGuyen, L. Pham-Nguyen, L.p. Nguyen, Loan Pham Nguyen, Loan Pham-Nguyen, Loc Dinh Nguyen, Loc Dinh Nguyen

Publications

709

Citations

H-Index

Concepts

All Affiliations

Institut de Microélectronique, Electromagnétisme et Photonique Commissariat à l'Énergie Atomique et aux Énergies Alternatives Institut polytechnique de Grenoble CEA Grenoble Laboratoire d'Électronique des Technologies de l'Information

About

Loan Pham-Nguyen is an author at Institut de Microélectronique, Electromagnétisme et Photonique specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	611
2	Electrical Engineering	13	16	611
3	Applied Physics	10	10	438
4	Computer Engineering	8	8	289
5	Biomedical Engineering	2	2	22

Loan Pham-Nguyen

Publications

621

Citations

H-Index

Page 1

	Year	Citations
FDSOI devices with thin BOX and ground plane integration for 32nm node and below C. Fenouillet-Béranger, S. Denorme, P. Perreau, Solid-State Electronics 3D Ic ArchitectureElectrical EngineeringEngineeringVlsi DesignThin Box	2009	130
22FFL: A high performance and ultra low power FinFET technology for mobile and RF applications B. Sell, B. Bigwood, Soonwoo Cha, Low-power ElectronicsElectrical EngineeringRf ApplicationsEngineeringHigh-speed Electronics	2017	86
Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below C. Fenouillet-Béranger, P. Perreau, S. Denorme, Solid-State Electronics Electrical EngineeringSemiconductor DeviceEngineeringUltra-thin BoxAdvanced Packaging (Semiconductors)	2010	63
Hybrid FDSOI/bulk High-k/metal gate platform for low power (LP) multimedia technology C. Fenouillet-Béranger, P. Perreau, Loan Pham-Nguyen, EngineeringVlsi DesignElectronic DesignIntegrated CircuitsSemiconductor Device	2009	45
FDSOI devices with thin BOX and ground plane integration for 32nm node and below C. Fenouillet-Béranger, S. Denorme, P. Perreau, EngineeringVlsi DesignThin BoxDevice IntegrationFdsoi Devices	2008	39
Large-Scale Time Characterization and Analysis of PBTI In HFO2/Metal Gate Stacks Jérôme Mitard, X. Garros, Loan Pham-Nguyen, EngineeringPrecise Lifetime ExtrapolationSemiconductor DeviceLarge-scale Time CharacterizationElectronic Packaging	2006	36
A Low Power Circuit Design for Chaos-Key Based Data Encryption Ngoc Nguyen, Loan Pham-Nguyen, Binh Minh Nguyen, IEEE Access Hardware SecurityElectrical EngineeringData Encryption StandardEngineeringInformation Security	2020	34
Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below C. Fenouillet-Béranger, P. Perreau, S. Denorme, EngineeringVlsi DesignFdsoi DevicesIntegrated CircuitsMv Dibl Reduction	2009	29
Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs Loan Pham-Nguyen, C. Fenouillet-Béranger, G. Ghibaudo, Solid-State Electronics Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsBias Temperature Instability	2010	27
<i>In Situ</i> Comparison of Si/High- $\kappa$ and $\hbox{Si}/ \hbox{SiO}_{2}$ Channel Properties in SOI MOSFETs Loan Pham-Nguyen, C. Fenouillet-Béranger, A. Vandooren, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2009	26

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