Loan Pham-Nguyen

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · Solid-State Electronics · 2009 · 130 citations

3D Ic Architecture, Electrical Engineering, Engineering +12

22FFL: A high performance and ultra low power FinFET technology for mobile and RF applications

B. Sell, B. Bigwood, Soonwoo Cha et al. · 2017 · 86 citations

Low-power Electronics, Electrical Engineering, Rf Applications +15

Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below

C. Fenouillet-Béranger, P. Perreau, S. Denorme et al. · Solid-State Electronics · 2010 · 63 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Hybrid FDSOI/bulk High-k/metal gate platform for low power (LP) multimedia technology

C. Fenouillet-Béranger, P. Perreau, Loan Pham-Nguyen et al. · 2009 · 45 citations

Engineering, Vlsi Design, Electronic Design +17

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · 2008 · 39 citations

Engineering, Vlsi Design, Thin Box +20