Hybrid FDSOI/bulk High-k/metal gate platform for low power (LP) multimedia technology

Abstract

In this paper, we present FD-SOI with High-K and Single Metal gate as a possible candidate for LP multimedia technology. Dual gate oxide co-integrated devices with EOT 17 ¿/V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dd</sub> 1.1 V and 29 ¿/V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dd</sub> 1.8 V are reported. The interest of Ultra-Thin Buried Oxide substrates (UTBOX) is reported in term of Multiple Vt achievement and matching improvement. Delay improvement up to 15% is reported on Ring Oscillators as compared to bulk 45 nm devices. In addition, for the first time 99.998% 2 Mbit 0.374 ¿m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> SRAM cut functionality has been demonstrated. Thanks to a hybrid FDSOI/bulk co-integration with UTBOX all IP's required in a SOC are demonstrated for LP applications.