2006 · 32 citations · 3 references
EngineeringElectrical EngineeringMaterials SciencePower ElectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsPower Factor CorrectionSemiconductor Device MaterialsSemiconductor ReliabilitySwitch-mode Power SuppliesWide-bandgap Semiconductor DevicesConduction LossesGate Oxide InterfacesPower MosfetsSchottky Barrier DiodesSchottky BarriersSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power Devices
SiC technology has advanced with commercial 600 V/10 A and 1200 V/10 A Schottky Barrier Diodes and soon‑to‑be available 800–1200 V/10 A MOSFETs. The next step is to integrate the SiC MOSFET and Schottky diodes into a power module for PFC and motor control applications. These diodes are used in the PFC stage of SMPS, and for high‑temperature (>200 °C) applications a SiC BJT outperforms MOSFETs due to its lack of gate oxide, providing better reliability and lower combined switching and conduction losses.
SiC materials and device technology has entered a new era with the commercialization and acceptance of 600 V/10 A and 1200 V/10 A Schottky Barrier Diodes (SBDs) in the marketplace. These diodes are finding applications in the Power Factor Correction (PFC) stage of Switch Mode Power Supplies (SMPS). SiC power MOSFETs with ratings of 800-1200 V up to 10 A will soon be commercially available. The next step is to integrate the SiC MOSFET and Schottky diodes in a power module for PFC and motor control applications. For high temperature applications, greater than 200°C, a bipolar switch such as a SiC BJT offers superior performance over the MOSFETs. The lack of gate oxide in the BJT offers better reliability at such extreme temperatures, in addition to the lowest combined switching and conduction losses.
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