Second harmonic generation and impedance spectroscopy at n-GaAs(1 0 0) electrodes

Semiconducting and other major properties of gallium arsenide

J. S. Blakemore · Journal of Applied Physics · 1982 · 2.5K citations

Natural Sciences, Materials Science, Physics +17

New and unified model for Schottky barrier and III–V insulator interface states formation

W. E. Spicer, P. W. Chye, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1979 · 930 citations

Engineering, Materials Engineering, Materials Science +17

Deep-level optical spectroscopy in GaAs

A. Chantre, G. Vincent, D. Bois · Physical review. B, Condensed matter · 1981 · 455 citations

Engineering, Electrical Engineering, Physics +15

The advanced unified defect model for Schottky barrier formation

W. E. Spicer, Z. Liliental‐Weber, E. R. Weber et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 397 citations

Engineering, Materials Science, Physics +17

Identification of AsGa antisites in plastically deformed GaAs

E. R. Weber, H. Ennen, U. Kaufmann et al. · Journal of Applied Physics · 1982 · 387 citations

Natural Sciences, Materials Engineering, Materials Science +17