G. Vincent - Concepedia

Author

G. Vincent

Institut National des Sciences Appliquées de Lyon

Also Known As

G Vincent, G. VINCENT, G. Vincent, Vincent, G., Vincent, Gambin

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

Institut National des Sciences Appliquées de Lyon Orange (France)Université Joseph Fourier STMicroelectronics (France)Centre National de la Recherche Scientifique

About

G. Vincent is an author at Institut National des Sciences Appliquées de Lyon specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	25	2.5K
2	Applied Physics	19	25	2.5K
3	Electrical Engineering	14	19	1.8K
4	Natural Sciences	1	1	450
5	Materials Engineering	1	1	14

G. Vincent

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Electric field effect on the thermal emission of traps in semiconductor junctions G. Vincent, A. Chantre, D. Bois Journal of Applied Physics SemiconductorsPhotonicsElectrical EngineeringElectric Field EffectsThermal Emission	1979	520
Deep-level optical spectroscopy in GaAs A. Chantre, G. Vincent, D. Bois Physical review. B, Condensed matter Transient GratingOptical MaterialsEngineeringAbsorption SpectroscopyOptical Characterization	1981	450
Photoelectric memory effect in GaAs G. Vincent, D. Bois, A. Chantre Journal of Applied Physics SemiconductorsElectrical EngineeringExperimental DataPhotoelectric Memory EffectEngineering	1982	302
Optical properties of porous silicon superlattices G. Vincent Applied Physics Letters Optical MaterialsEngineeringNanoporous MaterialReflectance MeasurementsPorous Silicon Superlattices	1994	216
Conductance and capacitance studies in GaP Schottky barriers G. Vincent, D. Bois, P. Pinard Journal of Applied Physics SemiconductorsElectrical EngineeringElectronic DevicesSample CalculationGap Vpe	1975	183
Optical absorption evidence of a quantum size effect in porous silicon I. Sagnes, A. Halimaoui, G. Vincent, Applied Physics Letters Materials SciencePs FilmQuantum Size EffectEngineeringNanoporous Material	1993	154
Photocapacitance quenching effect for “oxygen” in GaAs G. Vincent, D. Bois Solid State Communications SemiconductorsElectrical Engineering“ Oxygen ”EngineeringPhotoluminescence	1978	130
Transient-current study of field-assisted emission from shallow levels in silicon E. Rosencher, V. Mosser, G. Vincent Physical review. B, Condensed matter EngineeringDetrapping KineticsSilicon On InsulatorSemiconductor DeviceNanoelectronics	1984	64
Quenching effect of luminescence in bulk semi-insulating GaAs P. Leyral, G. Vincent, A. Nouailhat, Solid State Communications Electrical EngineeringPhotoluminescenceEngineeringApplied PhysicsOptoelectronics	1982	61
Study of ballistic transport in Si-CoSi2-Si metal base transistors E. Rosencher, P. A. Badoz, J. C. Pfister, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesBallistic Transport	1986	60

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