Electronics Letters · 1997 · 171 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsOptical Properties Of SemiconductorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor LasersEffective IndexLow-threshold Current LasersN-type DopingOptical Wave PropagationP-type DopingThreshold Current ReductionVertical-cavity Surface-emitting Lasers
Vertical-cavity surface-emitting lasers with reduced effective index guiding of the optical wave show a record performance. GaAs based 850 nm emission wavelength VCSELs are fabricated using solid source MBE and carbon p-type doping. Depending on device design maximum room temperature conversion efficiencies of 57%, an operating range from –80°C up to +185°C, and threshold currents below 500 µA from –40 to +80°C have been obtained.
12