Lasing characteristics of low-threshold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers

Abstract

Some lasing characteristics of index-guided InGaAs-GaAlAs vertical-cavity surface-emitting lasers (VCSEL's) with a native oxide confinement structure, which produced a low threshold current of 70 μA, are presented. It was found that nonradiative recombination was reduced and the estimated surface recombination velocity was almost negligible. The oxidation process was uniform to produce low threshold devices while the oxidation rate was dependent on the doping or composition of DBR's.