physica status solidi (a) · 2001 · 34 citations · 23 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsWide Band Gap SemiconductorsCurrent DensityGallium Nitride (Gan) MaterialsLight-emitting DevicesLight-emitting Diode MaterialsSemiconductor Laser DiodesThreshold Current ReductionWavelength Dependence
It is recognized that GaN-based semiconductor is the most excellent material for short wavelength emitting devices. In this paper, we review the development of InGaN light emitting diodes (LEDs) and laser diodes (LDs). Additionally, purely-blue LDs are demonstrated, and the emission-wavelength dependence of the threshold current density is studied.
23
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations