Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites

Abstract

We report a study on the Eu luminescence properties of Eu-doped GaN grown on a GaN substrate by organometallic vapor phase epitaxy. The site-selective excitation of Eu ions revealed the concentration of each luminescent site using the luminescence properties under resonant excitation. The quantitative evaluation of the Eu luminescent sites showed that more than 80% of Eu ions are incorporated into a high-symmetry site. However, the photoluminescence spectrum under indirect excitation is markedly different from that under resonant excitation, which indicates that the luminescent site with high symmetry exhibits low-efficiency energy transfer from the GaN host to the luminescent site.