Atsushi Nishikawa

Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Atsushi Nishikawa, Takashi Kawasaki, N. Furukawa et al. · Applied Physics Express · 2009 · 194 citations

Engineering, Optoelectronic Devices, Luminescence Property +17

Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

Atsushi Nishikawa, N. Furukawa, Takashi Kawasaki et al. · Applied Physics Letters · 2010 · 82 citations

White Oled, Electrical Engineering, Luminescence Properties +14

Eu luminescence center created by Mg codoping in Eu-doped GaN

D. Lee, Atsushi Nishikawa, Yoshikazu Terai et al. · Applied Physics Letters · 2012 · 55 citations

Materials Science, Electrical Engineering, Solid-state Lighting +14

Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers

Nathaniel Woodward, Atsushi Nishikawa, Y. Fujiwara et al. · Optical Materials · 2010 · 51 citations

Wide-bandgap Semiconductor, Engineering, Physics +6

Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

Nathaniel Woodward, Jonathan D. Poplawsky, Brandon Mitchell et al. · Applied Physics Letters · 2011 · 46 citations · Full text

Wide-bandgap Semiconductor, Engineering, Epitaxial Layers +19