Nathaniel Woodward - Concepedia

Author

Nathaniel Woodward

Also Known As

N Woodward, N. T. Woodward, N. Woodward, Nathaniel T. Woodward, Nathaniel Woodward, Woodward, Nathaniel, Woodward, Nathaniel S.

Publications

246

Citations

H-Index

Concepts

All Affiliations

Lehigh University The University of Osaka DEVCOM Army Research Laboratory

About

Nathaniel Woodward is an author at Lehigh University specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	194
2	Applied Physics	7	7	194
3	Natural Sciences	3	3	82
4	Chemistry	3	3	77
5	Electrical Engineering	1	1	12

Nathaniel Woodward

Publications

215

Citations

H-Index

Page 1

	Year	Citations
Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers Nathaniel Woodward, Atsushi Nishikawa, Y. Fujiwara, Optical Materials Wide-bandgap SemiconductorEngineeringPhysicsEu IonsEpitaxial-grown Gan Layers	2010	51
Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center Nathaniel Woodward, Jonathan D. Poplawsky, Brandon Mitchell, Applied Physics Letters Wide-bandgap SemiconductorEngineeringEpitaxial LayersChemistryEu Ions	2011	46
Laser fabrication of semiconducting ferroelectric single crystal SbSI features on chalcohalide glass P. K. Gupta, Adam Stone, Nathaniel Woodward, Optical Materials Express Materials ScienceMaterials EngineeringLaser Direct-write MethodGlass-ceramicEngineering	2011	30
Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy Grace D. Metcalfe, Eric D. Readinger, Hongen Shen, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringLuminescence SpectroscopyLuminescence PropertyNd3+ Ion	2009	24
Chromophore Orientation Dynamics, Phase Stability, and Photorefractive Effects in Branched Azobenzene Chromophores Victoria E. Campbell, Insik In, David J. McGee, Macromolecules Optical MaterialsEngineeringChromophore Orientation DynamicsChemistryUniform Dispersal	2006	19
Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields Nathaniel Woodward, Neeraj Nepal, Brandon Mitchell, Applied Physics Letters Wide-bandgap SemiconductorEngineeringInduced Electric FieldsMagnetismNanoelectronics	2011	12
Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy Grace D. Metcalfe, Eric D. Readinger, Ryan Enck, Optical Materials Express Materials ScienceAluminium NitridePhotoluminescenceEngineeringPhotoluminescence Excitation	2011	12
Resimulation-based self-supervised learning for pretraining physics foundation models P. Harris, J. Krupa, M. Kagan, Physical review. D/Physical review. D.	2025	11
Crystal-field analysis and Zeeman splittings of energy levels of Nd3+ (4<i>f</i>3) in GaN John B. Gruber, Gary W. Burdick, Nathaniel Woodward, Journal of Applied Physics	2011	10

Page 1