Nathaniel Woodward

Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers

Nathaniel Woodward, Atsushi Nishikawa, Y. Fujiwara et al. · Optical Materials · 2010 · 51 citations

Wide-bandgap Semiconductor, Engineering, Physics +6

Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

Nathaniel Woodward, Jonathan D. Poplawsky, Brandon Mitchell et al. · Applied Physics Letters · 2011 · 46 citations · Full text

Wide-bandgap Semiconductor, Engineering, Epitaxial Layers +19

Laser fabrication of semiconducting ferroelectric single crystal SbSI features on chalcohalide glass

P. K. Gupta, Adam Stone, Nathaniel Woodward et al. · Optical Materials Express · 2011 · 30 citations

Materials Science, Materials Engineering, Laser Direct-write Method +14

Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy

Grace D. Metcalfe, Eric D. Readinger, Hongen Shen et al. · Journal of Applied Physics · 2009 · 24 citations

Wide-bandgap Semiconductor, Engineering, Luminescence Spectroscopy +16

Chromophore Orientation Dynamics, Phase Stability, and Photorefractive Effects in Branched Azobenzene Chromophores

Victoria E. Campbell, Insik In, David J. McGee et al. · Macromolecules · 2006 · 19 citations

Optical Materials, Engineering, Chromophore Orientation Dynamics +19