Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers

Phonon dispersion and Raman scattering in hexagonal GaN and AlN

V. Yu. Davydov, Yu. É. Kitaev, I. N. Goncharuk et al. · Physical review. B, Condensed matter · 1998 · 811 citations

Materials Science, Aluminium Nitride, Phonon Symmetry +12

Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

A. J. Steckl, Jason Heikenfeld, Dong‐Seon Lee et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 284 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Atsushi Nishikawa, Takashi Kawasaki, N. Furukawa et al. · Applied Physics Express · 2009 · 194 citations

Engineering, Optoelectronic Devices, Luminescence Property +17

Prospects for rare earth doped GaN lasers on Si

A. J. Steckl, Jeong Ho Park, J. M. Zavada · Materials Today · 2007 · 106 citations · Full text

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +12

Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy

Z. Fleischman, C. Munasinghe, A. J. Steckl et al. · Applied Physics B · 2009 · 57 citations

Wide-bandgap Semiconductor, Engineering, Natural Sciences +10