Volkmar Dierolf

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Hongping Zhao, Guangyu Liu, Jing Zhang et al. · Optics Express · 2011 · 562 citations · Full text

Photonics, Electrical Engineering, Solid-state Lighting +14

Defect–Domain Wall Interactions in Trigonal Ferroelectrics

Venkatraman Gopalan, Volkmar Dierolf, David Scrymgeour · Annual Review of Materials Research · 2007 · 259 citations

Magnetic Properties, Engineering, Magnetic Materials +17

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li et al. · Applied Physics Letters · 2009 · 160 citations

Engineering, Optoelectronic Devices, Semiconductors +17

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

Brandon Mitchell, Volkmar Dierolf, T. Gregorkiewicz et al. · Journal of Applied Physics · 2018 · 115 citations

White Oled, Gan-based Red Light, Electrical Engineering +14

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

Hongping Zhao, G. Y. Liu, Xiaohang Li et al. · IET Optoelectronics · 2009 · 96 citations

Wide-bandgap Semiconductor, Engineering, Ingan Qw Leds +17