C. Munasinghe

Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy

Z. Fleischman, C. Munasinghe, A. J. Steckl et al. · Applied Physics B · 2009 · 57 citations

Wide-bandgap Semiconductor, Engineering, Natural Sciences +10

Spectroscopic and energy transfer studies of Eu3+ centers in GaN

Hongying Peng, Chang‐Won Lee, Henry O. Everitt et al. · Journal of Applied Physics · 2007 · 55 citations

Wide-bandgap Semiconductor, Nonradiative Relaxations, Engineering +17

Optically active centers in Eu implanted, Eu <i>in situ</i> doped GaN, and Eu doped GaN quantum dots

Loïc Bodiou, Alain Braud, Jean‐Louis Doualan et al. · Journal of Applied Physics · 2009 · 38 citations

Bandgap Excitation, Optical Materials, Engineering +21

GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

C. Munasinghe, A. J. Steckl · Thin Solid Films · 2005 · 19 citations

Electrical Engineering, Engineering, Interrupted Growth Epitaxy +3

Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE)

Ei Ei Nyein, U. Hömmerich, C. Munasinghe et al. · MRS Proceedings · 2005 · 15 citations

Photonics, Solid-state Lighting, Engineering +9