Hongen Shen

In-polar InN grown by plasma-assisted molecular beam epitaxy

Chad S. Gallinat, Gregor Koblmüller, Jay S. Brown et al. · Applied Physics Letters · 2006 · 169 citations

Semiconductors, Wide-bandgap Semiconductor, Electronic Devices +13

Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence

Blair C. Connelly, Grace D. Metcalfe, Hongen Shen et al. · Applied Physics Letters · 2010 · 148 citations

Ii-vi Semiconductor, Photonics, Optical Materials +13

Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates

Thomas Wunderer, Christopher L. Chua, Zhihong Yang et al. · Applied Physics Express · 2011 · 99 citations

Aluminium Nitride, Short Wavelength Optic, Optical Materials +21

Excitation wavelength dependence of terahertz emission from InN and InAs

Grace D. Chern, Eric D. Readinger, Hongen Shen et al. · Applied Physics Letters · 2006 · 83 citations

Photonics, Terahertz Spectroscopy, Engineering +10

Comparison of time‐resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates

Gregory A. Garrett, Hongen Shen, Michael Wraback et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 38 citations

Semiconductors, Photonics, Photoluminescence +13