In-polar InN grown by plasma-assisted molecular beam epitaxy

Chad S. Gallinat, Gregor Koblmüller, Jay S. Brown, +6

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectronic DevicesEngineeringPhysics +11

Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence

Blair C. Connelly, Grace D. Metcalfe, Hongen Shen, +1

Applied Physics Letters

Ii-vi SemiconductorPhotonicsOptical MaterialsRecombination MechanismsEngineering +11

Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates

Thomas Wunderer, Christopher L. Chua, Zhihong Yang, +5

Applied Physics Express

Aluminium NitrideShort Wavelength OpticOptical MaterialsEngineeringLaser Applications +19

Excitation wavelength dependence of terahertz emission from InN and InAs

Grace D. Chern, Eric D. Readinger, Hongen Shen, +4

Applied Physics Letters

PhotonicsTerahertz SpectroscopyEngineeringPhysicsOptical Properties +8

Comparison of time‐resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates

Gregory A. Garrett, Hongen Shen, Michael Wraback, +5

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

SemiconductorsPhotonicsPhotoluminescenceEngineeringPhysics +11

GaN/SiC avalanche photodiodes

Qiugui Zhou, Dion McIntosh, Zhiwen Lu, +4

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesOptical Materials +11

Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence

Blair C. Connelly, Grace D. Metcalfe, Hongen Shen, +9

Journal of Electronic Materials

Ii-vi SemiconductorPhotonicsPhotoluminescenceEngineeringPhysics +6

Enhanced terahertz radiation from high stacking fault density nonpolar GaN

Grace D. Metcalfe, Hongen Shen, Michael Wraback, +3

Applied Physics Letters

Thz PhotonicsTerahertz TechnologyEngineeringTerahertz PhotonicsNanoelectronics +15

Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy

Grace D. Metcalfe, Eric D. Readinger, Hongen Shen, +3

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringLuminescence SpectroscopyLuminescence PropertyNd3+ Ion +14

Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field

Grace D. Metcalfe, Hongen Shen, Michael Wraback, +4

Applied Physics Express

Thz PhotonicsTerahertz TechnologyEngineeringTerahertz PhotonicsTerahertz Physics +17