Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy

Abstract

We present the Stark energy sublevels of Nd3+ ions in GaN grown by plasma-assisted molecular beam epitaxy as determined by luminescence spectra. We correlate the photoluminescence spectra with transitions from the F43/2 excited state to the I49/2, I411/2, and I413/2 multiplets of the Nd3+ ion for above and below bandgap excitation, with the strongest emission occurring at 1.12 eV (1106 nm). We determine a splitting of the F43/2 excited state to be 4.1 meV. From photoluminescence excitation spectra, we also identify the Stark sublevels of the upper states F45/2, H29/2, F47/2, S43/2, G27/2, and G45/2. Photoluminescence excitation spectra reveal an optimal excitation energy of 1.48 eV (836 nm). Site-selective spectroscopy studies using combined excitation-emission spectroscopy with confocal microscopy indicate enhanced substantial doping at the Ga site.