Ryuta Wakamatsu

Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites

Ryuta Wakamatsu, D. Lee, Atsushi Koizumi et al. · Journal of Applied Physics · 2013 · 35 citations

Electrical Engineering, Luminescence Properties, Eu-doped Gan +14

Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

Brandon Mitchell, Dolf Timmerman, Jonathan D. Poplawsky et al. · Scientific Reports · 2016 · 30 citations · Full text

Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy

Takanori Arai, Dolf Timmerman, Ryuta Wakamatsu et al. · Journal of Luminescence · 2014 · 22 citations

Wide-bandgap Semiconductor, Electrical Engineering, Enhanced Excitation Efficiency +9

Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy

D. Lee, Ryuta Wakamatsu, Atsushi Koizumi et al. · Applied Physics Letters · 2013 · 18 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate

Ryuta Wakamatsu, D. Lee, Atsushi Koizumi et al. · Japanese Journal of Applied Physics · 2013 · 17 citations

Electrical Engineering, Luminescence Properties, Gan Substrate +11