Journal of Applied Physics · 2002 · 172 citations · 31 references
Natural SciencesMaterials SciencePhysicsNanotechnologyOptical MaterialsSpectroscopyAtomic ExcitationElectronic Excited StatesLuminescent MaterialsOptical Properties Of SemiconductorsRare-earth-doped MaterialsSilicon MaterialsAbsorption Cross SectionsExcitationExcitation Cross SectionsLuminescence LifetimeNanostructured SiliconSiliconSilicon NanocrystalsSilicon Nanostructures
We develop a model for the excitation of erbium ions in erbium-doped silicon nanocrystals via coupling from confined excitons generated within the silicon nanoclusters. The model provides a phenomenological picture of the exchange mechanism and allows us to evaluate an effective absorption cross section for erbium of up to 7.3×10−17 cm2: four orders of magnitude higher than in stoichiometric silica. We address the origin of the 1.6 eV emission band associated with the silicon nanoclusters and determine absorption cross sections and excitonic lifetimes for nanoclusters in silica which are of the order of 1.02×10−16 cm2 and 20–100 μs, respectively.
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Erbium implanted thin film photonic materials
Albert Polman · Journal of Applied Physics · 1997 · 1.1K citations
Minoru Fujii, Masato Yoshida, Yoshihiko Kanzawa et al. · Applied Physics Letters · 1997 · 537 citations
Natural Sciences, Materials Engineering, Materials Science +17