Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 12 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCompound SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsWide Band Gap SemiconductorsDevice FabricationMolecular Beam EpitaxySemiconductor TechnologySilicon CarbideSilicon Carbide (Sic) MaterialsSilicon-on-insulator ProcessingSilicon-on-insulator TechnologySubstrate Engineering
The Smart CutTM technology, now recognised as the technology of choice for the manufacturing of SOI substrates (Silicon On Insulator) [G. G. Shahidi, IBM J. Res. & Dev. 46, No. 2/3 (March and May 2002)], has got the unique potential to propose high quality Compound Semiconductors On Silicon (CSOS) substrates as a complementary technology to epitaxy. The use of this technology has led to the development of SiCOI (SiC On Insulator) structures where a thin film of single SiC crystal is bonded onto an oxidized substrate such as, for instance, a silicon substrate [L. Di Cioccio et al., Mater. Sci. Eng. B 46, 349 (1997)]. In this paper, we present the recent developments of SiCOI substrates developed using the Smart CutTM technology as well as the first results of GaN epitaxy performed onto these new structures. As a proof of concept and demonstration of feasibility, a Molecular Beam Epitaxy (MBE) GaN layer has been grown onto SiCOI substrate small samples and has been compared with similar growth on SiC bulk substrate. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
3