Lateral growth control in excimer laser crystallized polysilicon

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

Michael O. Thompson, G. J. Galvin, J. W. Mayer et al. · Physical Review Letters · 1984 · 566 citations

Materials Science, Engineering, Energy Densities +12

Sequential lateral solidification of thin silicon films on SiO2

Robert S. Sposili, James S. Im · Applied Physics Letters · 1996 · 296 citations

Optical Materials, Engineering, Crystal Growth Technology +25

High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film

K. Sera, Fujio Okumura, Hiroyuki Uchida et al. · IEEE Transactions on Electron Devices · 1989 · 280 citations

Optical Materials, Engineering, Poly-si Thin-film Transistors +21

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's

Toshiyuki Sameshima, Masaki Hara, S. Usui · Japanese Journal of Applied Physics · 1989 · 198 citations

Engineering, Poly-si Tft, Fabricate Poly-si Tft +19

Excimer-laser-annealed poly-Si thin-film transistors

S. D. Brotherton, D. McCulloch, J. B. Clegg et al. · IEEE Transactions on Electron Devices · 1993 · 164 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13