Facets Formation Mechanism of GaN Hexagonal Pyramids on Dot-Patterns via Selective MOVPE

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Engineering, Materials Engineering, Materials Science +17

New GaAs quantum wires on {111}B facets by selective MOCVD

Takashi Fukui, Shinji Ando · Electronics Letters · 1989 · 88 citations

Natural Sciences, Materials Science, Physics +17

Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition

Takashi Fukui, Seigo Ando, Yoshino K. Fukai · Applied Physics Letters · 1990 · 81 citations

Engineering, Materials Science, Physics +17