IEEE Transactions on Electron Devices · 1996 · 57 citations · 11 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice ModelingDevice SimulationIntegrated Circuit DesignShort-channel EffectsCompact Device ModelingField-effect Transistor SimulationFully Depleted Silicon-on-insulator TransistorsLarge-signal ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingMetal-oxide-semiconductor Field-effect Transistor Small-signal ModelsMosfet ModelingSmall-signal Modeling
An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C/sub /spl infin//-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation.
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