Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

Abstract

Resistive switching memory with low switching current is critical for low-power application. In this letter, we successfully demonstrated a four-terminal resistive RAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. The rupture process of conductive filament can be resulted from electrochemical reaction dominated by the lateral electric field. Therefore, during RESET process, no current flows through the filament, leading to an ultra-low switching current.