Xiaoyi Yang

Flexible capacitive pressure sensors for wearable electronics

Haizhen Wang, Zhe Li, Zeyi Liu et al. · Journal of Materials Chemistry C · 2022 · 254 citations

Engineering, Materials Engineering, Materials Science +17

Nitrogen-induced improvement of resistive switching uniformity in a HfO₂-based RRAM device

Hongwei Xie, Qi Liu, Yingtao Li et al. · Semiconductor Science and Technology · 2012 · 75 citations

Engineering, Materials Engineering, Materials Science +15

Investigation on the RESET switching mechanism of bipolar Cu/HfO₂/Pt RRAM devices with a statistical methodology

Xiaoyi Yang, Shibing Long, Kangwei Zhang et al. · Journal of Physics D Applied Physics · 2013 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

Haitao Sun, Hangbing Lv, Qi Liu et al. · IEEE Electron Device Letters · 2013 · 32 citations

Engineering, Electrical Engineering, Electrochemistry +15

Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

Ming Wang, Hangbing Lv, Qi Liu et al. · IEEE Electron Device Letters · 2012 · 32 citations

Engineering, Materials Engineering, Materials Science +17