Concepedia

Kangwei Zhang

KZ

Statistics

Publications

10

Citations

303

H-Index

10

Active since

2011

Affiliations

Institute of Microelectronics(Current)

Chinese Academy of Sciences

Lanzhou University

Shanghai Jiao Tong University

Shanghai Medical College of Fudan University

Kangwei Zhang is an author at Institute of Microelectronics specializing in materials science, electronic materials, and memristive materials.

Publications per year

2011–2022

10

Publications

10

Improvement of resistive switching characteristics in ZrO<sub>2</sub>film by embedding a thin TiO<sub><i>x</i></sub>layer

Yingtao Li, Shibing Long, Hangbing Lv et al. · Nanotechnology · 2011 · 54 citations

Natural Sciences, Materials Engineering, Materials Science +17

Bipolar one diode–one resistor integration for high-density resistive memory applications

Yingtao Li, Hangbing Lv, Qi Liu et al. · Nanoscale · 2013 · 53 citations

Engineering, Electrical Engineering, Materials Science +15

Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell

Shibing Long, Qi Liu, Hangbing Lv et al. · Applied Physics A · 2011 · 41 citations

Engineering, Materials Engineering, Materials Science +12

Investigation on the RESET switching mechanism of bipolar Cu/HfO<sub>2</sub>/Pt RRAM devices with a statistical methodology

Xiaoyi Yang, Shibing Long, Kangwei Zhang et al. · Journal of Physics D Applied Physics · 2013 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

Ming Wang, Hangbing Lv, Qi Liu et al. · IEEE Electron Device Letters · 2012 · 32 citations

Engineering, Materials Engineering, Materials Science +17

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