Nanotechnology · 2011 · 54 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsElectronic MaterialsThin FilmsElectrode MaterialsMemory DevicesMemristive MaterialsOxide SemiconductorsSemiconductor Device MaterialsThin Film Electrical PropertiesElectrode InterfacesMemory MaterialsMemristive MemoryNonvolatile Memory MaterialsRandom-access MemoryResistive Random-access MemoryResistive SwitchingResistive Switching Materials
The stabilization of the resistive switching characteristics is important to resistive random access memory (RRAM) device development. In this paper, an alternative approach for improving resistive switching characteristics in ZrO(2)-based resistive memory devices has been investigated. Compared with the Cu/ZrO(2)/Pt structure device, by embedding a thin TiO(x) layer between the ZrO(2) and the Cu top electrode, the Cu/TiO(x)-ZrO(2)/Pt structure device exhibits much better resistive switching characteristics. The improvement of the resistive switching characteristics in the Cu/TiO(x)-ZrO(2)/Pt structure device might be attributed to the modulation of the barrier height at the electrode/oxide interfaces.
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Natural Sciences, Materials Engineering, Materials Science +12
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