Concepedia

Wen-Tai Lian

WL

Statistics

Publications

8

Citations

347

H-Index

8

Active since

2010

Affiliations

Institute of Microelectronics(Current)

Chinese Academy of Sciences

Lanzhou University

Anhui University

Wen-Tai Lian is an author at Institute of Microelectronics specializing in electronic materials, memristive materials, and materials science.

Publications per year

2010–2012

8

Publications

8

Highly Stable Radiation-Hardened Resistive-Switching Memory

Yan Wang, Hangbing Lv, Wei Wang et al. · IEEE Electron Device Letters · 2010 · 80 citations

Medicine, Materials Engineering, Materials Science +17

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

Wen-Tai Lian, Hangbing Lv, Qi Liu et al. · IEEE Electron Device Letters · 2011 · 54 citations

Engineering, Electrical Engineering, Materials Science +16

Improvement of resistive switching characteristics in ZrO<sub>2</sub>film by embedding a thin TiO<sub><i>x</i></sub>layer

Yingtao Li, Shibing Long, Hangbing Lv et al. · Nanotechnology · 2011 · 54 citations

Natural Sciences, Materials Engineering, Materials Science +17

Investigation of resistive switching behaviours in WO<sub>3</sub>-based RRAM devices

Yingtao Li, Shibing Long, HangBing Lü et al. · Chinese Physics B · 2011 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +14

Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell

Shibing Long, Qi Liu, Hangbing Lv et al. · Applied Physics A · 2011 · 41 citations

Engineering, Materials Engineering, Materials Science +12

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