InGaN/GaN single-quantum-well microdisks

Abstract

We have grown InxGa1−xN/GaN quantum wells atop GaN microdisk with γ-LiAlO2 substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the InxGa1−xN/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk InxGa1−xN: Eg(x) = [3.42 − x * 2.65 − x * (1 − x) * 2.4] eV.