Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations

Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation

H.‐S. Philip Wong, D.J. Frank, P. M. Solomon · 2002 · 270 citations

Engineering, Electrical Engineering, Electronic Materials +16

Current crowding on metal contacts to planar devices

H. Murrmann, Dietrich Widmann · IEEE Transactions on Electron Devices · 1969 · 236 citations

Engineering, Electrical Engineering, Materials Science +17

25 nm CMOS design considerations

C. Wann, D.J. Frank · 2002 · 233 citations

Engineering, Electrical Engineering, Microelectronics +16

Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime

J. Kedzierski, Peng-Yao Xuan, Erik H. Anderson et al. · 2002 · 214 citations

Engineering, Electrical Engineering, Materials Science +17

SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain

M.P. Lepselter, Simon M. Sze · Proceedings of the IEEE · 1968 · 160 citations

Engineering, Electrical Engineering, Microelectronics +16