Concepedia

M.P. Lepselter

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Statistics

Publications

17

Citations

1K

H-Index

13

Active since

1965

Affiliations

NTT (Japan)(Current)

New Jersey Institute of Technology

Summit (United Kingdom)

M.P. Lepselter is an author at NTT (Japan) specializing in engineering, semiconductor devices, and microelectronics.

Publications per year

1965–2007

17

Publications

17

Reverse current-voltage characteristics of metal-silicide Schottky diodes

J. M. Andrews, M.P. Lepselter · Solid-State Electronics · 1970 · 313 citations

Engineering, Electrical Engineering, Materials Science +14

Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics

M.P. Lepselter, Simon M. Sze · Bell System Technical Journal · 1968 · 174 citations

Engineering, Electrical Engineering, Materials Science +15

Beam-Lead Technology

M.P. Lepselter · Bell System Technical Journal · 1966 · 161 citations

Engineering, Electrical Engineering, Materials Engineering +13

SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain

M.P. Lepselter, Simon M. Sze · Proceedings of the IEEE · 1968 · 160 citations

Engineering, Electrical Engineering, Microelectronics +16

Planar Epitaxial Silicon Schottky Barrier Diodes

D. Kahng, M.P. Lepselter · Bell System Technical Journal · 1965 · 44 citations

Engineering, Electrical Engineering, Materials Science +16

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