Beam-Lead Technology

Abstract

A process has been developed to batch-fabricate beam-lead transistors, integrated circuits, and other components, where the leads serve a structural and protective as well as electrical function. Platinum silicide ohmic contacts, titanium and platinum sputtered layers, and electroformed gold beam leads constitute the metallurgical structure of the devices described. Test transistors have survived 350°C aging for hundreds of hours in corrosive ambients, and centrifuging at 135,000 g's.