2009 · 24 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice SimulationDynamic Power ReductionIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsDynamic Behavioral AnalysisDynamic Performance AnalysisGate Charge ManagementMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingPower MosfetsSwitching Losses
In this work, the static and dynamic performance of three different proposed trench MOSFET architectures for a 35 V breakdown range have been analyzed by means of extensive TCAD simulations. The trench field-plate in the drift region in RSO MOSFET structures highly improves the R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on-sp</inf> /V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BR</inf> trade-off in comparison with the conventional UMOS counterpart. The Split-Gate RSO MOSFET is an alternative solution in order to reduce the gate-to-drain charge and capacitance, therefore further reduce the switching losses with respect to RSO MOSFET.
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Switching performance of low-voltage N-channel trench MOSFETs
R.J.E. Hueting, E.A. Hijzen, A.W. Ludikhuize et al. · 2003 · 20 citations
Low Gate Charge 20V Class Trench-aligning Lateral Power MOSFET
Shinichiro Matsunaga, M. Sawada, A. Sugi et al. · 2006 · 11 citations