E.A. Hijzen

Gate-Drain Charge Analysis for Switching in Power Trench MOSFETs

R.J.E. Hueting, E.A. Hijzen, A. Heringa et al. · IEEE Transactions on Electron Devices · 2004 · 61 citations

Device Modeling, Electrical Engineering, Engineering +9

BiCMOS technology improvements for microwave application

W.D. van Noort, Á. Rodríguez, Hongjiang Sun et al. · 2008 · 57 citations

Engineering, Nxp 0.25, High-voltage Npn +16

Breakdown Enhancement in Silicon Nanowire <i>p-n</i> Junctions

P. Agarwal, M. N. Vijayaraghavan, F. Neuilly et al. · Nano Letters · 2007 · 25 citations

Engineering, Diameter-dependent Breakdown Voltage, Integrated Circuits +16

New silicon drift detector design for diminishing lateral diffusion

E.A. Hijzen, E.M. Schooneveld, C.W.E. van Eijk et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1993 · 21 citations

Engineering, Physics, Silicon Debugging +6

Switching performance of low-voltage N-channel trench MOSFETs

R.J.E. Hueting, E.A. Hijzen, A.W. Ludikhuize et al. · 2003 · 20 citations

Low-power Electronics, Electrical Engineering, Engineering +7