Growth of highly uniform epitaxial layers over multiple substrates by molecular beam epitaxy

Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy

S. Matteson, H. D. Shih · Applied Physics Letters · 1986 · 53 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Classification of Surface Defects on GaAs Grown by Molecular Beam Epitaxy

Kazuo Nanbu, Junji Saito, Tomonori Ishikawa et al. · Journal of The Electrochemical Society · 1986 · 37 citations

Engineering, Defect Tolerance, Electron Microscopy +16

GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth

H. Fronius, A. Fischer, K. Ploog · Japanese Journal of Applied Physics · 1986 · 37 citations

Semiconductors, Materials Science, Wide-bandgap Semiconductor +11

An indium-free mount for GaAs substrate heating during molecular beam epitaxial growth

D. E. Mars, J. N. Miller · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 31 citations

Engineering, Optoelectronic Devices, Integrated Circuits +16

Molecular beam epitaxy of gallium arsenide using direct radiative substrate heating

E. S. Hellman, P. M. Pitner, Alex Harwit et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 25 citations

Materials Science, Temperature Control, Electrical Engineering +14