J. N. Miller

Formation and growth of black spots in organic light-emitting diodes

Jon S. McElvain, Homer Antoniadis, M. R. Hueschen et al. · Journal of Applied Physics · 1996 · 303 citations

Engineering, Organic Electronics, Chemistry +17

Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

D. Bimberg, J. Christen, T. Fukunaga et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 163 citations

Materials Science, Semiconductors, Growth Islands +15

Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

D. Bimberg, D. E. Mars, J. N. Miller et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 124 citations

Engineering, Line Shape Theory, Semiconductor Nanostructures +17

GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Lei Li, Kazuki Nomoto, Ming Pan et al. · IEEE Electron Device Letters · 2020 · 116 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +10

Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells

Marius Grundmann, Ulrich Lienert, D. Bimberg et al. · Applied Physics Letters · 1989 · 65 citations

Materials Science, Wide-bandgap Semiconductor, Ii-vi Semiconductor +13