E. S. Hellman

Growth of high <i>T</i> <i>c</i> superconducting thin films using molecular beam epitaxy techniques

Chris Webb, Shang-Lin Weng, J. N. Eckstein et al. · Applied Physics Letters · 1987 · 129 citations

Natural Sciences, Materials Science, Physics +17

Electron affinity at aluminum nitride surfaces

Chih‐I Wu, Antoine Kahn, E. S. Hellman et al. · Applied Physics Letters · 1998 · 105 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of Ga-face and N-face GaN films using ZnO Substrates

E. S. Hellman, D. N. E. Buchanan, D. Wiesmann et al. · MRS Internet Journal of Nitride Semiconductor Research · 1996 · 71 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy

E. S. Hellman, J. S. Harris · Journal of Crystal Growth · 1987 · 67 citations

Natural Sciences, Materials Science, Physics +12

Epitaxial Ba1−<i>x</i>K<i>x</i>BiO3 films on MgO: Nucleation, cracking, and critical currents

E. S. Hellman, E. H. Hartford, E. M. Gyorgy · Applied Physics Letters · 1991 · 66 citations

Natural Sciences, Materials Engineering, Materials Science +16