Concepedia

Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (100) by radio frequency sputtering at different deposition temperatures

Li Zhu, Q. Fang, X.J. Wang, J.P. Zhang, M. Liu, Gang He, L.D. Zhang

Applied Surface Science · 2008 · 19 citations · 34 references

References

34

Physical chemistry of surfaces

Choice Reviews Online · 1998 · 11.7K citations

Natural Sciences, Chemistry, Materials Science +17

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Effect of nitrogen on band alignment in HfSiON gate dielectrics

Şafak Sayan, Nhan V. Nguyen, James R. Ehrstein et al. · Applied Physics Letters · 2005 · 456 citations

Natural Sciences, Materials Science, Physics +17

Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

D. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 440 citations

Natural Sciences, Materials Engineering, Materials Science +16

Band offsets and Schottky barrier heights of high dielectric constant oxides

P. W. Peacock, John Robertson · Journal of Applied Physics · 2002 · 383 citations

Engineering, Materials Engineering, Materials Science +17