2006 · 33 citations · 2 references
EngineeringComputer EngineeringElectrical EngineeringComputer ArchitectureMicroelectronicsSemiconductor DevicesDevice ScalingIntegrated Circuit DesignMemory DevicesMemory Hierarchy DesignMemory Subsystem DesignPhysical DesignDie ArchitectureLow-power Memory CircuitsMemory Circuit DesignOn-chip Memory DesignStatic Random-access Memory DesignThreshold VoltageThreshold Voltage Scaling
Technologies and improved performance of the floating body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the floating body cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant
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