Fumiyoshi Matsuoka

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes

H. Shiga, D. Takashima, S. Shiratake et al. · IEEE Journal of Solid-State Circuits · 2010 · 75 citations

Electrical Engineering, Conventional Laser Fuse, Vlsi Design +13

Floating Body RAM Technology and its Scalability to 32nm Node and Beyond

T. Shino, N. Kusunoki, Tomoki Higashi et al. · 2006 · 33 citations

Hardware Security, Electrical Engineering, Engineering +13

First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size

Soo Man Seo, H. Aikawa, Soo Gil Kim et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 16 citations

Engineering, Microscopy, Emerging Memory Technology +24

Generation of Accurate Reference Current for Data Sensing in High-Density Memories by Averaging Multiple Pairs of Dummy Cells

Takashi Ohsawa, Kosuke Hatsuda, K. Fujita et al. · IEEE Journal of Solid-State Circuits · 2011 · 14 citations

Non-volatile Memory, Engineering, Measurement +17

FBC's Potential of 6F² Single Cell Operation in Multi-Gbit Memories Confirmed by a Newly Developed Method for Measuring Signal Sense Margin

Fumiyoshi Matsuoka, Takashi Ohsawa, Tomoki Higashi et al. · 2007 · 12 citations

Electrical Engineering, Signal Sense Margin, Engineering +13